Wafer-level package, a method of manufacturing thereof and a method of manufacturing semiconductor devices from such a wafer-level package

ABSTRACT

A wafer-level package includes a semiconductor wafer having at least one semiconductor chip circuit forming region each including a semiconductor chip circuit each provided with test chip terminals and non test chip terminals, at least one external connection terminal, at least one redistribution trace provided on the semiconductor wafer, at least one testing member, and an insulating material. A first end of the redistribution trace is connected to one of the test chip terminals and a second end of said redistribution trace is extended out to a position offset from the chip terminals. The testing member is provided in an outer region of the semiconductor chip circuit forming region, and the second end of the redistribution trace is connected to the testing member.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a wafer-level package, amethod of manufacturing thereof, and a method of manufacturingsemiconductor devices from such a wafer-level package. The presentinvention particularly relates to an improved wafer-level package to betested by a preliminary test (PT) and a final test (FT), a method ofmanufacturing the wafer-level package, and a method of manufacturingsemiconductor devices using such a wafer-level package.

Recently, there is a need for more efficient manufacturing and testingprocesses of semiconductor devices. In order to achieve this, a fulltest (including PT and FT) is implemented on an uncut semiconductorwafer before being cut into individual semiconductor devices. As will bedescribed below, the full test has several advantages over the relatedart in which the semiconductor wafer is cut into individualsemiconductor devices and each of the semiconductor devices are testedindividually.

The advantages include good handling efficiency, a possibility ofsharing certain equipment and reduced space. If the wafer sizes areequal, handling equipment can be shared. Also, it is possible to savespace otherwise taken up as a storage area and/or an installation areawhen accommodating individualized semiconductor devices (LSI chips) incontainers such as a tray.

For higher density mounting, there is an increasing need for a KGD(Known-Good Die) and a real-chip-size package (a package having the samesize as that of the semiconductor chip). However, with the packagestructure of the semiconductor device of the related art, which does notcorrespond to the KGD or the real-chip-size package, the area of thepackage is greater than that of the semiconductor chip. Therefore, thesemiconductor wafer must be individualized at some point beforepackaging. Thus, with the package structure of the related art, theentire process, that is to say, from a manufacture process to a testprocess, cannot be implemented on the semiconductor wafer.

However, with the KGD or the real-chip-size package, since the finalpackage configuration corresponds to the area of the semiconductor chip,the entire process can be implemented on the semiconductor wafer.Therefore, the above-described advantages can be obtained.

2. Description of the Related Art

Recently, there is an increasing interest in a wafer-level package whichis a package structure with which the entire process from themanufacturing process to the testing process can be implemented on asemiconductor wafer. The wafer-level package includes a semiconductorwafer provided with a plurality of semiconductor chip circuits with chipterminals, external connection terminals, redistribution tracesconnecting the chip terminals and the external connection terminals, andan insulating material such as a sealing resin. The insulating materialis provided for protecting the semiconductor chip circuits and theredistribution traces. A structure without the insulating material isalso possible.

The wafer-level package may be used in two different configurations. Oneis in the form of a wafer (i.e., before being cut) and the other is inform of individual semiconductor devices (i.e., after cutting intoindividual semiconductor chip circuits.)

In the following, the wafer-level package of the above-describedstructure will be described with regard to a test process thereof. Withthe wafer-level package, like that of the semiconductor devices of otherconfigurations, the manufacture process includes a test process. Thetest process generally includes a preliminary test (PT) and a final test(FT).

The PT is a test implemented before providing the insulating material.The PT is a general test such as a conduction test of theinterconnections, and thus does not include the operation test of thesemiconductor chip circuit itself. Since the PT is implemented beforeproviding the insulating material, the PT can be implemented using thechip terminals provided on the semiconductor chip circuit.

The PT is particularly advantageous for the package structure of thesemiconductor devices of the related art (hereinafter, referred to as aconventional package), which are not designed for the KGD or for thereal-chip-size package. In a manufacture process of the conventionalpackage, the PT is followed by a cutting process (i.e., dicing process)for individualizing the semiconductor wafer into the semiconductordevices. Then, only those semiconductor devices, which were determinedgood in the PT, are provided with the insulating material and undergothe FT. In other words, those semiconductor devices, which weredetermined bad in the PT, are not provided with the insulating materialand also do not undergo the FT. Thus, the manufacture efficiency can beimproved.

The FT is implemented after providing the insulating material. The FT isa total test including the operation test of the semiconductor chipcircuit. Since the FT is implemented after the insulating material hasbeen provided, the FT can only be implemented using the externalconnection terminals exposed from the insulating material. In otherwords, the terminals (such as the chip terminals) other than thosegenerally used by the users are not exposed. Therefore, the chipterminals sealed in the insulating material cannot be used in the FT.

Therefore, in the related art, the wafer level package is tested by,first, implementing the PT before providing the insulating materialusing the chip terminals which are not yet covered with the insulatingmaterial. After the PT, the insulating material is provided, and thenthe FT is implemented using the external connection terminals exposedfrom the insulating material.

In the test process of the related art, the object of implementing thePT is to improve manufacture efficiency by avoiding the insulatingmaterial being provided on bad semiconductor devices and thus avoidingthe FT being implemented thereon. On the contrary, with the wafer-levelpackage, all semiconductor chip circuits, including circuits of the badsemiconductor devices, are provided with the insulating material andundergo the FT, so that it is not necessary to implement the PT beforethe FT.

Also, as has been described above, the wafer-level package is used forsimplifying the manufacture process by using the semiconductor waferfrom the manufacture process to the test process. For furthersimplifying the manufacture process, the PT and the FT, which in therelated art were implemented as two separate tests, can be integratedinto a single test process.

When the PT and the FT are integrated into a single test process, theintegrated test process can be carried out either before providing theinsulating material (i.e., when the PT is implemented in the relatedart) or after providing the insulating material (i.e., when the FT isimplemented in the related art). When the integrated test process isimplemented before providing the insulating material, it is not possibleto detect any failure produced in the semiconductor chip circuit whileproviding the insulating material. Thus, the test process should beimplemented in a later step in the manufacture process of thesemiconductor device.

On the contrary, when the integrated test process is implemented afterproviding the insulating material, only the external connectionterminals exposed from the insulating material may be connected to testequipment (e.g., a semiconductor tester). That is to say, the chipterminals include terminals which do not serve as the externalconnection terminals, but can be used for testing the semiconductor chipcircuit (hereinafter referred to as test chip terminals). There is adrawback that the test chip terminals will be covered with theinsulating material, so that the test using the test chip terminalscannot be implemented after providing the insulating material.

In order to avoid such a drawback, test terminals may be provided in aregion of the semiconductor chip circuit region, which terminals areexposed from the insulating material and are connected to theabove-described test chip terminals. Thus, with such test terminals, alltests including the PT and the FT (full test) can be implemented afterproviding the insulating material.

However, the test terminals will not be used after the test process, andthus become unwanted terminals for the package. Such test terminalsprovided on the semiconductor chip circuit forming region results in anincrease in the size of the semiconductor chip circuit forming regiondue to an area occupied by the test terminals. Accordingly, it is notpossible meet the requirement for a miniaturization of the semiconductordevice.

Also, when the test terminals are provided at a position adjacent to theexternal connection terminals used for operating the semiconductor chip,the test terminals may also be mistakenly mounted on a mounting board.In such a case, a false operation may occur. Therefore, the testterminals should not remain on the package after the insulating materialhas been provided.

Further, the PT can be omitted (that is to say, all tests can beimplemented in the FT), but as has been described above, not all testchip terminals can be used in the FT. Therefore, tests, which used to beimplemented in the PT only, cannot be implemented. For example, if theRAM and logic circuits are mounted in a mixed manner, a single test ofthe RAM cannot be carried out. At the same time, recently, since a highreliability is required for the semiconductor device, the PT cannot beomitted just for the sake of simplifying the manufacturing process.

From the above-described reasons, the PT and the FT have not beenintegrated in the related art. First, the PT is implemented, and thenthe insulating material is provided. Finally, the FT is implemented.Therefore, there is a problem that the manufacture process of thewafer-level package is complicated and thus the manufacture efficiencyis decreased and the manufacture cost is increased.

SUMMARY OF THE INVENTION

Accordingly, it is a general object of the present invention to providea wafer-level package, a method of manufacturing thereof, and a methodof manufacturing a semiconductor device from such a wafer-level packagewhich can solve the problems described above.

It is another and more specific object of the present invention toprovide a wafer-level package, a method of manufacturing thereof, and amethod of manufacturing a semiconductor device from such a wafer-levelpackage which can improve a manufacturing efficiency and reduce amanufacturing cost.

In order to achieve the above objects according to the presentinvention, a wafer-level package includes:

a semiconductor wafer having at least one semiconductor chip circuitforming region each including a semiconductor chip circuit and aplurality of chip terminals, the chip terminals including at least onetest chip terminal and at least one non-test chip terminal;

at least one external connection terminal electrically connected to theat least one non-test chip terminal;

at least one redistribution trace provided on the semiconductor wafer, afirst end of the redistribution trace being connected to one of the testchip terminals and a second end of the redistribution trace beingextended out to a position offset from the one of the chip terminals;

at least one testing member provided in an outer region of thesemiconductor chip circuit forming region, the second end of theredistribution trace being connected to the least one testing member;and

an insulating material covering at least the redistribution trace, theat least one external connection terminal and the at least one testingmember being exposed from the insulating material.

With the wafer-level package described above, even when the testingmember is provided, the semiconductor chip circuit forming region willnot become large. Therefore, the size of each individualizedsemiconductor device will be small compared to that of the structure inwhich the testing member is provided in the semiconductor chip circuitforming region.

Also, the testing member is provided in the outer region of thesemiconductor chip circuit forming region, which outer region is to beremoved upon individualizing into semiconductor devices. Therefore, evenif the testing member is provided on the wafer-level package, theoperating condition of the individualized semiconductor device will notbe altered.

In order to achieve the above object, a wafer-level semiconductor deviceis disclosed, which includes:

a semiconductor wafer having chip circuit forming regions;

at least one testing member provided in an outer region of the chipcircuit forming regions; and

a line provided on the semiconductor wafer and connecting the at leastone testing member and a test terminal provided in one of the chipcircuit forming regions.

It is still another object of the present invention to provide an easiermethod of manufacturing the above-described wafer-level package.

In order to achieve the above object, a method of manufacturing awafer-level package includes the steps of:

a) preparing a semiconductor wafer having at least one semiconductorchip circuit forming region each provided with a semiconductor chipcircuit and a plurality of chip terminals, at least one of the chipterminals being a test chip terminal and at least one being a non-testchip terminal;

b) providing a redistribution layer including an insulating film havingthrough holes on the semiconductor wafer and an electrically conductivefilm formed on the insulating film, the film being formed intoredistribution traces having a predetermined pattern;

c) providing external connection terminals and at least one testingmember on the redistribution layer, the at least one testing memberbeing provided at an outer region of the at least one semiconductor chipcircuit forming region and connected to the test chip terminal via atleast one of the redistribution traces;

d) testing the at least one semiconductor chip circuit using the atleast one testing member; and

e) providing a sealing resin on the redistribution layer in such amanner that top parts of the external connection terminals and the atleast one testing member are exposed from the sealing resin.

With the above-described method, the external connection terminals andthe testing members can be provided simultaneously. Further, the PT andthe FT can be implemented simultaneously. Thus, the packagemanufacturing process and the test process can be simplified.

It is yet another object of the present invention to provide an easiermethod of manufacturing at least one semiconductor device using theabove-described wafer-level package.

In order to achieve the above-described object, a semiconductor devicemanufacturing method includes the steps of:

a) manufacturing the wafer-level package as described above,

b) testing the at least one semiconductor chip circuit provided in theat least one semiconductor chip circuit forming region by means of saidat least one testing member; and

c) after the step b), cutting the wafer-level package along the outerregion so as to manufacture at least one individualized semiconductordevices.

With the above-described method, external connection terminals and thetesting member can be provided simultaneously. Further, the PT and theFT can be implemented simultaneously. Thus, the package manufacturingprocess and the test process can be simplified.

Also, the testing member will be removed when individualizing thesemiconductor devices, so that the operating condition of theindividualized semiconductor device will not be altered.

It is yet another object of the present invention to provide asemiconductor device which can be manufactured according to a method ofthe present invention.

In order to achieve the above object, a semiconductor device includes:

a semiconductor chip;

a test terminal and a non-test terminal provided to the semiconductorchip; and

a line which is connected to the test terminal and extends out of acircuit forming region.

Other objects and further features of the present invention will beapparent from the following detailed description when read inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing a connection state of a wafer-level packageof a first embodiment of the present invention.

FIG. 2 is a partial sectional view showing the wafer-level package ofthe first embodiment of the present invention taken along a broken lineI—I.

FIG. 3 is a plan view showing the wafer-level package of the firstembodiment of the present invention.

FIG. 4 is a partial sectional view showing a wafer-level package of asecond embodiment of the present invention.

FIG. 5 is a diagram showing a connection state of a wafer-level packageof a third embodiment of the present invention.

FIG. 6 is a diagram showing a connection state of a wafer-level packageof a fourth embodiment of the present invention.

FIG. 7 is a diagram showing a connection state of a wafer-level packageof a fifth embodiment of the present invention.

FIG. 8 is a diagram showing a connection state of a wafer-level packageof a sixth embodiment of the present invention.

FIG. 9 is a diagram showing a connection state of a wafer-level packageof a seventh embodiment of the present invention.

FIG. 10 is a diagram showing a connection state of a wafer-level packageof an eighth embodiment of the present invention.

FIG. 11 is a diagram showing a connection state of a wafer-level packageof a ninth embodiment of the present invention.

FIG. 12 is a diagram showing a connection state of a wafer-level packageof a tenth embodiment of the present invention.

FIG. 13 is a plan view showing a wafer-level package of an eleventhembodiment of the present invention.

FIG. 14 is a diagram showing a connection state of a wafer-level packageof a twelfth embodiment of the present invention.

FIG. 15 is a diagram showing a connection state of a wafer-level packageof a thirteenth embodiment of the present invention.

FIG. 16 is a flowchart showing a method of manufacturing a semiconductordevice using a wafer-level package of one embodiment of the presentinvention.

FIGS. 17A to 17D are cross-sectional diagrams showing a packagemanufacture process of the method of manufacturing a semiconductordevice using a wafer-level package of one embodiment of the presentinvention.

FIG. 18 is a cross-sectional diagram showing a test process of themethod of manufacturing a semiconductor device using a wafer-levelpackage of one embodiment of the present invention.

FIG. 19 is a cross-sectional diagram showing a cutting process of themethod of manufacturing a semiconductor device using a wafer-levelpackage of one embodiment of the present invention.

FIG. 20 is a partial sectional view showing a wafer-level package of afourteenth embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, principles and embodiments of the present inventionwill be described with reference to the accompanying drawings.

FIGS. 1 to 3 are diagrams showing a wafer-level package 10A of a firstembodiment of the present invention. FIG. 1 is a diagram showing aconnection state of the wafer-level package 10A, FIG. 2 is a diagramshowing a connection state of the wafer-level package 10A, and FIG. 3 isa diagram showing a connection state of the wafer-level package 10A.

The wafer-level package 10A may be used as an uncut wafer or may be cutinto individualized semiconductor devices 40 (shown in FIG. 19) havingrespective semiconductor chip circuits.

As shown in FIG. 2, the wafer-level package 10A includes a semiconductorwafer 11 provided with external connection terminals 14, redistributiontraces 15, test terminals 16, and an insulating layer 17 (insulatingmaterial).

The semiconductor wafer 11 is, for example, a silicon substrate providedwith a plurality of semiconductor chip circuit forming regions 12(hereinafter referred to as circuit regions). The circuit region 12 isprovided with a semiconductor chip circuit and a plurality of chipterminals 13 formed thereon. The chip terminals 13 are connected to thesemiconductor chip circuits. Thus, the semiconductor chip circuit willoperate when signals and electrical power are supplied to the chipterminals 13.

Also, the plurality of chip terminals 13 may be categorized into twogroups according to their functions. A first group includes chipterminals directly contributing to the operation of the semiconductorchip circuit, and the other group includes chip terminals used only fortesting the semiconductor chip circuit. In the following description,the chip terminals in the latter group (i.e., chip terminals used fortesting the semiconductor chip circuit) will be referred to as test chipterminals 13A. The chip terminals other than the test chip terminals 13Awill be referred to as non-test chip terminals 13B.

The external connection terminals 14 are terminals used for mounting thewafer-level package 10A or the individualized semiconductor devices 40on a mounting board (not shown). In the present embodiment, the externalconnection terminals 14 are directly provided on the non-test chipterminals 13B and are not provided on the test chip terminals 13A.Therefore, in the present embodiment, the external connection terminals14 are provided at positions corresponding to the non-test chipterminals 13B. The external connection terminals 14 are provided so asto protrude by a predetermined amount from the upper surface of thesemiconductor wafer 11. The external connection terminals 14 may beprovided by techniques such as sputtering, deposition and metal plating.

The redistribution traces 15 are made of an electrically conductivelayer and are formed into a predetermined pattern on the upper surfaceof the semiconductor wafer 11. One end of the redistribution trace 15 isconnected to the chip terminal 13 (13A), while the other end of theredistribution trace 15 is connected to the test terminal 16. In thecross-sectional diagram, the redistribution trace 15 seem to extend tothe external connection terminal 14, however, as can be seen in FIG. 1,in fact, the external connection terminal 14 is not connected to theredistribution trace 15. Thus, by providing the redistribution traces 15on the semiconductor wafer 11, the chip terminals 13 can be extended todesired positions on the semiconductor wafer 11. Then, the externalconnection terminals 14 or the test terminals 16 can be formed at thedesired positions.

Thus, by providing the redistribution traces 15, there is greaterfreedom in the layout of the terminals. That is to say, with theredistribution traces 15, the respective terminals 13 can be pulled outto positions not only within the circuit region 12 but also outside thecircuit region 12. Hereinafter, the region outside the circuit region 12is referred to as an outer region 18.

In the present embodiment, as has been described above, the externalconnection terminals 14 are directly formed on the non-test chipterminals 13B. Therefore, the redistribution traces 15 extend only fromthe test chip terminals 13A. Also, though not shown, an insulating filmis provided on the upper part of the circuit region 12, and theredistribution trace 15 is formed on the insulating film. Therefore,even if the redistribution traces 15 are formed on the circuit region12, the redistribution traces 15 and the semiconductor chip circuit willnot be short-circuited.

The test terminals 16 are used for testing the semiconductor chipcircuit formed in the circuit region 12. The test terminals 16 areprovided so as to protrude by a predetermined amount from the uppersurface of the semiconductor wafer 11. In a similar matter to theexternal connection terminals 14, the test terminals 16 may be providedby techniques such as sputtering, deposition and metal plating.

Also, as shown in FIG. 2, the test terminals 16 are configured such thatthe height of the protrusions and shapes thereof are equal to those ofthe external connection terminals 14. The test terminals 16 are, via theabove-described redistribution traces 15, connected to the test chipterminals 13A provided in the circuit region 12. Therefore, the testterminals 16 are terminals only used for testing the wafer-level package10A.

The insulating layer 17 is made of an insulating material, e.g., SiO₂,having a predetermined thickness. The insulating layer 17 protects thesemiconductor chip circuit provided in the circuit region 12, the chipterminals 13, and the redistribution traces 15. In the presentembodiment, the insulating layer 17 is provided on the entire surface ofthe semiconductor wafer 11, with the above-described external connectionterminals 14 and the test terminals 16 being exposed (or protruded) fromthe insulating layer 17.

Therefore, even after providing the insulating layer 17 on thesemiconductor wafer 11, an electrical conduction with the semiconductorchip circuit can be achieved by means of the external connectionterminals 14 and the test terminals 16.

Now, the position of the test terminals 16 of the wafer-level package10A of the above-described structure will be described. As has beendescribed above, the test terminals 16 are connected to the test chipterminals 13A via the redistribution traces 15. Also, the redistributiontraces 15 can be extended to positions not only within the circuitregion 12 but also to the outer region 18.

The present embodiment is characterized in that the redistributiontraces 15 are extended out of the circuit region 12 to the outer region18, and the test terminals 16 are provided in the outer region 18. Also,when the wafer-level package 10A is used as individualized semiconductordevices 40, a cutting (scribing) process is implemented on thewafer-level package 10A. The test terminals 16 are provided on thepositions to be scribed (i.e., scribe regions). In FIG. 3, the scriberegions are indicated by dash-dot lines.

With the wafer-level package 10A of the present embodiment, each of thetest chip terminals 13A is extended out of the circuit region 12 to theouter region 18 by means of the redistribution trace 15. Then, at an endextended out in the outer region 18, the redistribution trace 15 isprovided with the test terminal 16 exposed from the insulating layer 17.Thus, the test terminals 16 can be used even after the insulating layer17 has been provided.

Thus, since the test can be implemented using both the externalconnection terminals 14 and the test terminals 16, the PT, which wasimplemented before providing the insulating layer 17, and the FT, whichwas implemented after providing the insulating layer 17, can now beimplemented simultaneously. Accordingly, with a simultaneous full test,the test process (manufacture process) can be simplified and themanufacturing cost can be reduced.

Also, by providing the redistribution traces 15, the test terminals 16are provided in the outer region 18 (outside the circuit region 12).Thus, the area of the circuit region 12 will not increase even if thetest terminals 16 are provided. Therefore, the size of theindividualized semiconductor device 40 can be reduced.

Further, the outer region 18, in which the test terminals 16 areprovided, is a region to be removed upon individualizing the wafer-levelpackage 10A into the semiconductor devices 40. Therefore, when thesemiconductor devices 40 are individualized, the test terminals 16 willbe removed together with the outer region 18, and will not remain on thesemiconductor device 40. Therefore, even if the test terminals 16 areprovided on the wafer-level package 10A, the operating condition of theindividualized semiconductor device 40 will not be altered.

Also, in the above-described embodiment, the test terminals 16 areprovided in the scribe regions (see FIG. 3). However, the test terminals16 can be provided at positions not only within the scribe regions, butalso in other regions in the outer region 18 other than the scriberegions (e.g., peripheral positions of the semiconductor wafer 11).

In the following, a second embodiment of the present embodiment will bedescribed.

FIG. 4 is a partial sectional view showing a wafer-level package 10B ofa second embodiment of the present invention. In FIG. 4, componentswhich are the same as those of the wafer-level package 10A of the firstembodiment illustrated in FIGS. 1 to 3 are indicated with the samereference numbers, and detailed explanations thereof are omitted. Thisalso applies to each of the embodiments described with reference toFIGS. 5 to 20.

In the wafer-level package 10B of the second embodiment, thesemiconductor wafer 11 is provided with a redistribution layer 19. Theredistribution layer 19 is provided with the external connectionterminals 14, the test terminals 16 and a sealing resin 22 (insulatingmaterial).

The redistribution layer 19 includes the redistribution traces 15, aninsulating film 20, and through holes 21. The insulating film 20 is madeof an insulating material, e.g., SiO₂, and is provided with theredistribution traces 15 having a predetermined pattern. Also, theinsulating film 20 is provided with the through holes 21. The chipterminals 13 provided in the circuit region 12 and the redistributiontraces 15 are electrically connected by means of the through holes 21.

The sealing resin 22 may be an epoxy-type resin, and can be provided onthe entire surface of the semiconductor wafer 11, for example, bymolding. Also, the above-described external connection terminals 14 andthe test terminals 16 penetrate through this sealing resin 22 andprotrude upwards, so as to enable an electrical connection with anexternal part. Also, the external connection terminals 14 are connectedto the chip terminals 13 provided in the circuit region 12 by means ofthrough holes 21, but such structure is not shown in the figure for thesake of clarity.

The wafer-level package 10B of the above structure may also achieve thesame effect as that of the wafer-level package 10A of the firstembodiment. Further, in the present embodiment, the sealing resin 22 ismade of an epoxy-type resin, which is commonly used as the resin packagematerial. Therefore, the semiconductor wafer 11 (the semiconductor chipcircuit, the redistribution traces 15, etc) is securely protected, thusimproving the reliability of the wafer-level package 10B. Also, thesealing resin 22 need not be made of the epoxy-type resin, but can alsobe made of other resin such as polyimide.

In the following, a third embodiment of the present invention will bedescribed.

FIG. 5 is a diagram showing a connection state of a wafer-level package10C of a third embodiment of the present invention. The wafer-levelpackage 10A of the first embodiment described with reference to FIGS. 1to 3 relates to a structure in which the external connection terminals14 are formed directly on the non-test chip terminals 13B. On thecontrary, the present embodiment is characterized in that it is providedwith internal redistribution traces 23 inside the circuit region 12, sothat the non-test chip terminals 13B and the external connectionterminals 14 are provided at mutually offset positions.

Thus, the positions of the external connection terminals 14 do notnecessarily correspond with the positions of the non-test chip terminals13B. Also, because the non-test chip terminals 13B and the externalconnection terminals 14 are provided at mutually offset positions, thecircuit structure of the semiconductor chip circuit within the circuitregion 12 can be designed with greater freedom.

In the following, a fourth embodiment of the present invention will bedescribed.

FIG. 6 is a diagram showing a connection state of a wafer-level package10D of a fourth embodiment of the present invention. The wafer-levelpackage 10D of the present embodiment is characterized in that a fuse 24is provided at an intermediate position of one of the redistributiontraces 15 extends out to the outer region 18. The fuse 24 prevents anexcessive power supply between the test chip terminal 13A and the testterminal 16. One of the test chip terminals 13A is a power supplyterminal and the test terminals 16 are connected to a power supply line42.

For example, when implementing a burn-in test on a wafer-level package,it is often difficult to provide a power supply line independently toeach semiconductor chip circuit. As in the present embodiment, bysharing the power supply line 42 between the plurality of semiconductorchip circuits, the burn-in test can be implemented at a reduced cost.

However, when sharing the power supply line 42 between the plurality ofsemiconductor chip circuits, if a semiconductor chip circuit has bad DCcharacteristics (power supply short circuit), there is a risk of burningother semiconductor chip circuits. By providing the fuse 24, even if anexcessive power supply occurs due to the presence of a bad semiconductorchip circuit, the fuse 24 will break so that other normal semiconductorchip circuits will be prevented from being damaged.

Further, the fuse 24 will not remain on the semiconductor device 40since the fuse 24 is provided in the outer region 18, and thus isremoved when individualizing into semiconductor devices 40. Therefore,even if the fuse 24 is provided, the operating condition of theindividualized semiconductor device 40 will not be altered.

In the following, a fifth embodiment of the present invention will bedescribed.

FIG. 7 is a diagram showing a connection state of a wafer-level package10E of a fifth embodiment of the present invention. The wafer-levelpackage 10E of the present embodiment is characterized in that the testterminals 16 provided for respective ones of the plurality of circuitregions 12 are connected by a common line 25 formed in the external area18.

With this structure, by supplying test signals to one of the testterminals 16, the test signals can be simultaneously supplied to theplurality of test terminals 16 via the common line 25. Therefore, anumber of interconnections can be reduced. Also, test efficiency isimproved compared to a structure in which respective signals areprovided to each one of the test terminals 16.

Also, the common line 25 is provided in the outer region 18, and thus isremoved when individualizing into semiconductor devices 40. Therefore,even if the common line 25 is provided on the wafer-level package 10E,the operating condition of the individualized semiconductor device 40will not be altered.

In the following, a sixth embodiment of the present invention will bedescribed.

FIG. 8 is a diagram showing a connection state of a wafer-level package10F of a sixth embodiment of the present invention. The wafer-levelpackage 10F of the present embodiment is characterized in that thenon-test chip terminals 13B of the plurality of the semiconductor chipcircuits provided on the semiconductor wafer 11 are connected by joininglines 26. In detail, in the embodiment shown in FIG. 8, the chipterminal 13C provided in the circuit region 12A and the chip terminal13D provided in the circuit region 12B are connected by the joining line26.

Some of the non-test chip terminals 13B will be used to improve the testefficiency and reduce the number of interconnections, so that suchnon-test chip terminals 13B may remain connected during the test. Thus,by connecting such non-test chip terminals 13B (13C, 13D) by the joiningline 26, it is possible to improve the test efficiency and reduce thenumber of interconnections.

Also, the joining lines 26 are provided in the outer region 18, and thusare removed when individualizing into semiconductor devices 40.Therefore, even if the joining lines 26 are provided on the wafer-levelpackage 10F, the operating condition of the individualized semiconductordevice 40 will not be altered.

In the following, a seventh embodiment of the present invention will bedescribed.

FIG. 9 is a diagram showing a connection state of a wafer-level package10G of a seventh embodiment of the present invention. The wafer-levelpackage 10G of the present embodiment is characterized in that thecommon lines 25 are provided in the outer region 18, and theredistribution traces 15 are connected to these common lines 25. Also, atest pad 27 is provided at a part of the common line 25. The test pad 27is provided so as to be exposed from the insulating layer 17 (or sealingresin 22).

With the structure described above, the plurality of redistributiontraces 15 corresponding to the plurality of circuit regions 12 areconnected via the common lines 25. Thus, by supplying test signals tothe test pads 27, the test signals can be simultaneously supplied to theplurality of semiconductor chip circuits via the common line 25.Therefore, a number of interconnections can be reduced. Also, sincethere is no need to provide the test terminal 16 for each of thesemiconductor chip terminals, it is possible to simplify the structureand the manufacturing processes of the wafer-level package 10G.

In the following, an eighth embodiment of the present invention will bedescribed.

FIG. 10 is a diagram showing a connection state of a wafer-level package10H of an eighth embodiment of the present invention. The wafer-levelpackage 10H of the present embodiment is characterized in that aplurality of units 28, 29 having different functions are provided in thecircuit region 12. Also, the redistribution traces 15 are extended outfrom each one or a combination of the plurality of units 28, 29 to theouter region 18. On the end positioned in the outer region 18, theredistribution trace 15 is provided with the test terminal 16.

In detail, in the present embodiment, the circuit region 12 is providedwith a logic part (LOGIC) 28 and a random-access memory part (RAM) 29.The LOGIC 28 and the RAM 29 are connected by internal connections 30.Also, the LOGIC 28 is provided with chip terminals (not shown) havingthe external connection terminals 14 connected thereto. Thesemiconductor device having a mixed structure of units with differentproperties or functions, such as the RAM and the LOGIC, is referred toas a system LSI device. Recently, as a result of a higher density andhigher performance of the semiconductor devices, more system LSI devicesare used. However, it is difficult to individually test the unitsprovided in the system LSI device.

This is because these units are interconnected by the internalconnections 30 in the same circuit region 12 so that there may be a unitthat cannot be directly accessed by the external connection terminals14. For example, with the structure of the present embodiment, the LOGIC28 and the RAM 29 are connected via the internal connections 30, and theexternal connection terminals 14 serve as access terminals to the LOGIC28. Thus, the RAM 29 cannot be directly accessed via the externalconnection terminals 14.

Now, the function of the system LSI device will be described as a whole.The LOGIC 28 accesses the RAM 29 via the internal connections 30 so asto acquire and process data in the RAM 29. Then, the thus-obtained datais output from the external connection terminals 14. Therefore, with thesystem LSI of the structure of the related art, it is not possible todirectly access the RAM 29. In other words, the RAM 29 cannot be testedindividually in the related art.

However, with the structure of the present embodiment, it is nowpossible to test the RAM 29 individually. The redistribution traces 15are pulled out to the outer region 18 from the RAM 29, and the testterminals 16 are provided on the redistribution trace 15. Thus, the RAM29, which is a unit that is not directly connected to the externalconnection terminals 14, can be tested.

Accordingly, since it is now possible to test the RAM 29, thereliability of the test can be improved. Also, the redistribution traces15 and the test terminals 16 will be removed when cutting thewafer-level package 10H into individualized semiconductor devices 40.Therefore, the operating condition of the individualized semiconductordevice 40 will not be altered.

In the following, a ninth embodiment of the present invention will bedescribed.

FIG. 11 is a diagram showing a connection state of a wafer-level package10I of a ninth embodiment of the present invention. The wafer-levelpackage 10I of the present embodiment includes a burn-in test circuit 32(Built-In Self Test: BIST). The redistribution traces 15 are extendedout from the BIST 32 to the outer region 18. The test terminals 16 areprovided on the redistribution traces 15 in the outer region 18.

The BIST 32 implements the test on a main circuit part 31, so that it ispossible to read out only the result of the test from the test chipterminals 13A. However, the test chip terminals 13A serving asinput/output terminals of the BIST 32 are used only in the PT (or cannotnot be used in the FT), since the test chip terminals 13A cannot be leftas the external connection terminals after wafer packaging.

On the contrary, with the present embodiment, the test chip terminals13A, serving as the input/output terminals of the BIST 32 after waferpackaging, can be accessed via the test terminals 16 and theredistribution traces 15. Thus, a test using the BIST 32 can beimplemented in the FT. Thus, the PT will be not as necessary as it usedto be, so that the test (full test) can be implemented only with the FTand without the PT.

In the following, a tenth embodiment of the present invention will bedescribed.

FIG. 12 is a diagram showing a connection state of a wafer-level package10J of a tenth embodiment of the present invention. The wafer-levelpackage 10J of the present embodiment is characterized in that a circuitexclusively used for a burn-in test 32A (hereinafter referred to as a BIcircuit 32A) is provided in the outer region 18.

In detail, the redistribution trace 15 is provided from the test chipterminal 13A in the circuit region 12 to the outer region 18. Theredistribution trace 15 is connected to the BI circuit 32A. As has beendescribed above, the BI circuit 32A and the redistribution trace 15 areprovided in the outer region 18. Also, the test terminal 16 may beprovided directly on the BI circuit 32A.

Now, a full test on the wafer-level package and the normal wafer (here,the wafer-level package and the normal wafer will be referred to as awafer) will be described. In the related art, the full test on the waferwas not often implemented before individualizing the wafer into thesemiconductor devices. One of the reasons is that it is difficult toimplement a burn-in test on the uncut semiconductor wafer. In otherwords, with the currently available contactor, it is difficult tocontact all of the plurality of terminals (external connection terminals14 and the test terminals 16) provided on each of the semiconductor chipterminals provided on the wafer. This is also because there are severaltens of thousands of terminals provided on the wafer and thus theterminal pitch is narrow.

In order to minimize such a problem, an attempt has been made toincorporate the BI circuit 32A into the circuit region 12, and thencontacting a few terminals (burn-in terminals accessing the burn-incircuit). However, with the wafer-level package of the related art inwhich the BI circuit 32A is incorporated within the circuit region 12,the burn-in terminals will, together with the external connectionterminals 14, remain in the semiconductor device 40, thus producing thesame problem as above.

However, with the structure of the present embodiment, theredistribution traces 15 are pulled out from the BI circuit 32A to theouter region 18. The test terminals 16 serving as the burn-in terminalsare provided on the redistribution traces 15 in the outer region 18, sothat it is possible to access the BI circuit 32A via the test terminals16. Thus, the BI circuit 32A can be used after providing the insulatinglayer 17 (sealing resin 22).

Accordingly, it is possible to implement a burn-in test on thewafer-level package 10I, so that a test with an increase dreliability ispossible. Also, since the test terminals 16 will be removed whenindividualizing into the semiconductor devices 40, the operatingcondition of the individualized semiconductor device 40 will not bealtered.

In the following, an eleventh embodiment of the present invention willbe described.

FIG. 13 is a plan view showing a wafer-level package 10K of an eleventhembodiment of the present invention. The wafer-level package 10K of thepresent embodiment is characterized in that a test history recordingpart 33 (test history storage) is provided in the outer region 18 on thesemiconductor wafer 11.

The test history recording part 33 is connected to all semiconductorchip circuits on the semiconductor wafer 11 via redistribution traces 35exclusively used for recording provided in the outer region 18. Also,the test history recording part 33 is provided with access terminals 34(input/output terminals).

The access terminals 34 protrude upwards from the insulating layer 17(sealing resin 22) formed on the semiconductor wafer 11, so that ispossible to access the test history recording part 33 after providingthe insulating layer 17 (sealing resin 22). By accessing the testhistory recording part 33, it is possible to store/retrieve the testdata such as test history and the positions of the bad semiconductorchip circuits.

With the wafer-level package 10K provided with the insulating layer 17or the sealing resin 22, the whole semiconductor wafer 11 is coveredwith the resin (in many cases a black resin). Thus, it is difficult toimplement a visual inspection. Also, since the semiconductor chipcircuits are provided on the semiconductor wafer 11 with a high density,it is difficult to imprint characters or codes indicating a vast amountof test history information on the peripheral part of the wafer-levelpackage 10K.

However, with the test history recording part 33, a vast amount of testhistory information of the wafer-level package 10K can be easily writtenin/read out. Thus, efficiency and accuracy of the test can be improved.Also, since the test history recording part 33 is provided on the outerregion 18, it will be removed when individualizing into thesemiconductor devices 40. Thus, the operating condition of theindividualized semiconductor device 40 will not be altered.

In the following, a twelfth embodiment of the present invention will bedescribed.

FIG. 14 is a diagram showing a connection state of a wafer-level package10L of a twelfth embodiment of the present invention. The wafer-levelpackage 10L of the present embodiment is provided with a test supportelement 36 for testing the semiconductor chip circuit on the outerregion 18 on the semiconductor wafer 11. Also, the redistribution traces15 connected to the test chip elements 13A provided in the circuitregion 12 are connected to the test support element 36 via the commonline 25.

The test support element 36 may be an electronic element such as a testLSI circuit or a resistance. With the test support element 36, theefficiency of the wafer-level test can be improved. Also, it isadvantageous when implementing a high-frequency test, since the distancebetween the test chip terminal 13A and the test support element 36 canbe shortened.

Also, since the test support element 36 and the common line 25 areprovided in the outer region 18, they will be removed whenindividualizing into the semiconductor devices 40. Thus, the operatingcondition of the individualized semiconductor device 40 will not bealtered.

In the following, a thirteenth embodiment of the present invention willbe described.

FIG. 15 is a diagram showing a connection state of a wafer-level package10M of a thirteenth embodiment of the present invention. The wafer-levelpackage 10M of the present embodiment is characterized in that the testterminals 16 and dummy terminals 38 are provided in an identificationarea 37 with a predetermined rule, thus enabling an identification.

The identification area 37 is provided in the outer region 18 of thesemiconductor wafer 11, and the test terminals 16 are connected to thecorresponding circuit region 12 by means of the redistribution traces15. Also, the dummy terminal 38 is not connected to the redistributiontrace 15, but has the same shape as that of the test terminal 16 and isexposed from the insulating layer 17 (sealing resin 22).

As has been described above, it is difficult to visually inspect thewafer-level package 10K provided with the insulating layer 17 or thesealing resin 22. However, the test terminals 16 and the dummy terminals38 are arrange with a predetermined rule indicating the characteristics(e.g., index mark, type code, lot identification) of the semiconductorwafer 11 and are exposed from the insulating layer 17 (sealing resin22). Therefore, the semiconductor wafer 11 can be identified by viewingthe positions of the test terminals 16 and the dummy terminals 38, sothat the identification process can be implemented on the wafer-levelpackage 10M, which is not particularly suitable for visual inspection.

Further, the test terminals 16 and the dummy terminals 38 having theidentification function are also removed when individualizing into thesemiconductor devices 40. Therefore, the operating condition of theindividualized semiconductor device 40 will not be altered. Also, if theidentification is possible by viewing the positioning of the testterminals 16, it is not always necessary to provide the dummy terminals38.

In the following, a fourteenth embodiment of the present invention willbe described.

FIG. 20 is a cross-sectional view showing a wafer-level package 10N of afourteenth embodiment of the present invention. In wafer-level packages10A to 10M, there is provided the insulating layer 17 or the sealingresin 22 on the redistribution trace 15, whereas the wafer-level package10N is not provided with the insulating material (insulating layer 17,sealing resin 22, etc.) Note that an insulating film is provided betweenthe semiconductor chip circuit and the redistribution traces 15.

With the above-described structure, the redistribution traces 15 arealways exposed outside, so that the test terminals 16 can be formed onthe redistribution traces 15 exposed from the circuit 12. Thus, each ofthe semiconductor chip circuits can be tested after the wafer-levelpackage 10N has been manufactured.

However, as has been described, it is preferable that that terminals notused by the users are not provided in the circuit region 12. Thus,instead of the test terminals 16, flat connection pads capable of beingconnected to test contacts 41 can be provided in the circuit region 12(see FIG. 18).

However, in order to achieve a proper connection with the test contact,the connection pad must have a certain area. Then, with this structure,the area of the circuit region 12 will become too large.

On the contrary, with the wafer-level package 10N of the presentembodiment, the chip terminal 13 used during the test is extended out tothe position outside the circuit region 12 by means of theredistribution trace 15, while providing the test terminal 16 on theredistribution traces 15 thus extended out. Therefore, the circuitregion 12 will not become too large even if the test terminals 16 areprovided. Therefore, compared to the structure where the test terminalsare provided in the circuit region 12, the circuit region 12 can be usedefficiently, and thus when individualized, each of the semiconductordevice 40 will become compact.

Also, the test terminals 16 are provided at positions to be removed uponindividualizing into semiconductor devices 40, so that the testterminals 16 will not remain on the individualized semiconductor devices40. Therefore, even if the test terminals 16 are provided on thewafer-level package 10N, the operating condition of the individualizedsemiconductor device 40 will not be altered.

In the following, a method of manufacturing the semiconductor device(hereinafter referred to as a semiconductor device manufacturing method)using the wafer-level package of an embodiment of the present inventionwill be described.

The semiconductor device manufacturing method will be described withreference to FIGS. 16 to 19. FIG. 16 is a flowchart showing thesemiconductor device manufacturing method and FIGS. 17A to 19 aredetailed diagrams showing the semiconductor device manufacturing method.

As shown in FIG. 16, the semiconductor device manufacturing method ofthe present embodiment includes a package manufacturing process (step1), a test process (step 2) and a cutting process (step 3).

In the package manufacturing process (step 1), the wafer-level package10B of the second embodiment shown in FIG. 4 is manufactured. In thetest process (step 2), the semiconductor chip circuits provided on thewafer-level package 10B are tested by means of the test terminals 16 andthe external connection terminals 14. In the cutting process (step 3),the outer region 18 (scribe regions) of the wafer-level package 10B iscut so as to manufacture the individualized semiconductor devices 40. Inthe following, each of the processes will be described in detail.

FIGS. 17A to 17D are diagrams showing the package manufacturing process(step 1) for manufacturing the wafer-level package 10B. In order tomanufacture the wafer-level package 10B, first, as shown in FIG. 17A,the semiconductor wafer 11 provided with the circuit regions 12 isprepared.

Then, as shown in FIG. 17B, the insulating film 20 (SiO₂ film) having apredetermined thickness is provided on the semiconductor wafer 11. Also,using a photolithography technique, small holes are formed in theinsulating film 20. Then, an electrically conductive film is formed onthe insulating film 20 by plating (or by other thin-film formingtechniques such as sputtering and deposition). Further, theredistribution traces 15 having a predetermined pattern are formed byetching.

When providing the electrically conductive material, some of theelectrically conductive material will be introduced into theabove-described small holes, so that the through holes 21 are formed.Also, the lower ends of the through holes 21 are electrically connectedto the chip terminals 13 (13A) provided in the circuit region, and theupper ends are electrically connected to the redistribution traces 15.Thus, the redistribution layer 19 is formed on the semiconductor wafer11.

Then, after providing the redistribution layer 19 as described above,the external connection terminals 14 and the test terminals 16 areformed as shown in FIG. 17C. As has been described above, the externalconnection terminals 14 and the test terminals 16 may be formedsimultaneously, because their shapes are identical. Therefore, thepresent embodiment is described regarding to a case in which theexternal connection terminals 14 and the test terminals 16 are formedsimultaneously.

In detail, a mask having openings at positions corresponding to theexternal connection terminals 14 and the test terminals 16 is used, andthe external connection terminals 14 and the test terminals 16 are grownby plating (or sputtering or deposition). The heights of the terminals14, 16 may be adjusted by controlling the plating time. Thus, in thepresent embodiment, since the external connection terminals 14 and thetest terminals 16 are formed simultaneously, the manufacturing processcan be simplified compared to a structure in which the terminals 14, 16are formed in separate steps.

In the present embodiment, the external connection terminals 14 areformed directly on the chip terminals 13B provided on the semiconductorchip circuit, and the test terminals 16 are formed on the redistributiontraces 15. Also, the test terminals 16 are formed at the positionoutside the circuit area 12, i.e., in the outer region 18.

After the external connection terminals 14 and the test terminals 16 areformed in the manner described above, the semiconductor wafer 11 ismounted on the mold (not shown) and the resin mold process isimplemented. Thus, as shown in FIG. 17D, the sealing resin 22 is formedon the semiconductor wafer 11. As has been described above, the sealingresin 22 may be made of an epoxy-type resin.

When forming the sealing resin 22, a molding process is implemented sothat the predetermined top part of the external connection terminals 14and the test terminals 16 are exposed from the sealing resin 22.Therefore, even after the sealing resin 22 (insulating material) hasbeen provided, the semiconductor chip circuit is accessible via theexternal connection terminals 14 and the test terminals 16.

Thus, by implementing the above-described processes, the wafer-levelpackage 10B is manufactured.

The package manufacturing process (step 1) is followed by the testprocess (step 2). FIG. 18 is a diagram showing the test process.

In the test process, test contactors 41 connected to a semiconductordevice tester (not shown) are brought into contact with the externalconnection terminals 14 and the test terminals 16 exposed from thesealing resin 22. Then, the PT and the FT, which are carried out inseparate steps in the related art, are implemented simultaneously.

That is to say, in the present embodiment, the test terminals 16connected to the test chip terminals 13A can be used after the sealingresin 22 (insulating material) has been provided. Therefore, the testcan be implemented using both the external connection terminals 14 andthe test terminals 16. Thus, the PT, which is implemented beforeproviding the sealing resin 22 in the related art, and the FT, which isimplemented after providing the sealing resin 22 (i.e., a full test),can be implemented simultaneously. Accordingly, the test process can besimplified. Also, the external connection terminals 14 can be providedwith a greater pitch than that for the PT implemented on the wafer.Therefore, it is possible to reduce an accuracy of the contactorsconnected to the external connection terminals 14 during the test. Thus,it is easier to make contact.

In the embodiment shown in FIG. 18, the contactors connected to theexternal connection terminals 14 and the test terminals 16 are shown asprobe-type contactors, but contactors of a membrane type may be used.

When the test history recording part 33 is provided as in thewafer-level package 10K of the eleventh embodiment, shown in FIG. 13,the information obtained from the above-described test is stored in thetest history recording part 33.

Further, when the wafer-level package 10B is used as an uncutsemiconductor wafer, the cutting process (step 3) described later isomitted and the wafer-level package 10B is mounted on the mountingboard.

The above-described package manufacturing process (step 1) and a testprocess (step 2) are followed by the cutting process (step 3). As shownin FIG. 19, in the cutting process, the outer region 18 is cut andremoved by means of a dicing saw 39. Thus, individualized semiconductordevices 40 are formed.

The cutting positions (dicing lines) of the dicing saw 39 are at theouter region 18 as shown by the dash-dot line shown in FIG. 3. Also,after the cutting process by the dicing saw 39, the size of thesemiconductor device 40 viewed from above will be approximately equal tothe size of the circuit region 12. That is to say, the semiconductordevice 40 thus manufactured is a real-chip-size package.

Since the dicing saw 39 will cut along cutting regions in the outerregion 18 and the components (in the present embodiment, theredistribution traces 15, the test terminals 16) provided in the outerregion 18 are removed during the cutting process. According to thestructure of the present embodiment, the manufacturing process can besimplified compared to the structure in which separate processes forremoving the components 15, 16 are provided.

Also, since the redistribution traces 15 and the test terminals 16 willnot remain on the individualized semiconductor devices 40, thesemiconductor device 40 can be reduced in size. The presence of theredistribution traces 15 and the test terminals 16 will not alter theoperating condition of the individualized semiconductor device 40.

The manufacturing method of the present embodiment has been describedfor the wafer-level package 10B. However, the wafer-level packages 10A,10C to 10M of the first and third to thirteenth embodiments can also bemanufactured using generally the same manufacturing method and the sameeffects can be achieved.

Also, with the wafer-level packages 10A, 10C to 10M of each embodiment,the components provided on the outer region 18 will be removed in thecutting process. Therefore, the presence of such components will notalter the operating condition of the individualized semiconductor device40.

Further, the present invention is not limited to these embodiments, butvariations and modifications may be made without departing from thescope of the present invention.

The present application is based on Japanese priority application No.10-374804 filed on Dec. 28, 1998, the entire contents of which arehereby incorporated by reference.

What is claimed is:
 1. A method of manufacturing a wafer-level packagecomprising the steps of: a) preparing a semiconductor wafer having atleast one semiconductor chip circuit forming region each provided with asemiconductor chip circuit and a plurality of chip terminals, at leastone of said chip terminals being a test chip terminal and at least onebeing a non-test chip terminal; b) forming a redistribution layerincluding an insulating film having through holes on the semiconductorwafer and an electrically conductive film formed on said insulatingfilm, said electrically conductive film being redistribution traceshaving a predetermined pattern; c) forming external connection terminalsand at least one testing member on said redistribution layer, saidtesting member being provided at an outer region of said semiconductorchip circuit forming region and connected to said test chip terminalthrough said redistribution traces; and d) testing said semiconductorchip circuit using said testing member.
 2. The method of manufacturing awafer level package as claimed in claim 1, further comprising the stepof: e) providing a sealing resin on said redistribution layer in such amanner that top parts of said external connection terminals and saidtesting member are exposed from said sealing resin.
 3. A method ofmanufacturing a semiconductor device using a wafer-level packagecomprising the steps of: a) preparing a wafer-level package including asemiconductor wafer having at least one semiconductor chip circuitforming region each including a semiconductor chip circuit and aplurality of chip terminals, said chip terminals including at least onetest chip terminal and at least one non-test chip terminal, at least oneexternal connection terminal electrically connected to said non-testchip terminal; at least one redistribution trace provided on saidsemiconductor wafer, a first end of said redistribution trace beingconnected to one of said test chip terminals and a second end of saidredistribution trace being extended out to a position offset from saidone of said chip terminals; and at least one testing member provided inan outer region of said semiconductor chip circuit forming region, saidsecond end of said redistribution trace being connected to said testingmember, b) testing said semiconductor chip circuit provided in saidsemiconductor chip circuit forming region using said testing member; andc) after said step b), cutting said wafer-level package along said outerregion so as to manufacture at least one individualized semiconductordevice.
 4. The method of manufacturing a semiconductor device using awafer-level package as claimed in claim 3, wherein in said step a), saidexternal connection terminal and said testing member are manufacturedsimultaneously.
 5. The method of manufacturing a semiconductor deviceusing a wafer-level package as claimed in claim 3, wherein in said stepc), structures provided in said outer region, particularly said testingmember, are removed simultaneously.